Related papers: Reversible Electric-Field Driven Magnetic Domain W…
We derive the equations of motion of a Domain Wall in a thin-film magnet coupled to the surface states of a Topological Insulator in the presence of of both an electric field along the Domain Wall and a magnetic field perpendicular to the…
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ N\'{e}el domain wall in a…
We study current-induced dynamics of a magnetic domain wall by solving a time-dependent Schr\"{o}dinger equation combined with Landau-Lifshitz-Gilbert equation in a one-dimensional electron system coupled to localized spins. Two types of…
Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for new methods of information storage and processing. A major obstacle for their practical use is the domainwall velocity, which is traditionally…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
Ferroic domain walls could play an important role in microelectronics, given their nanometric size and often distinct functional properties. Until now, devices and device concepts were mostly based on mobile domain walls in ferromagnetic…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe…
The dynamics of a domain wall driven by a spin-polarized current in a mesoscopic system is studied numerically. Spin-mixing in the states of the conduction electrons is fully taken into account. When the Fermi energy of the electrons is…
The pinning effect of the periodic diameter modulations on the domain wall propagation in FeCoCu individual nanowires is determined by Magnetic Force Microscopy, MFM. A main bistable magnetic configuration is firstly concluded from MFM…
Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…
In magnetic wires with perpendicular anisotropy, moving domain with only current or only circularly polarized light requires a high power. Here, we propose to reduce it by using both short current pulses and femtosecond laser pulses…
Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we…
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…
We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current…
We identify hexagonal YMnO$_3$ as a material realization of the elusive $\beta$-phase of unconventional magnetism, a noncollinear, noncoplanar antiferromagnetic state defined by intrinsic spin-momentum locking and a topological spin…
$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic…
We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical Kerr Effect Microscopy and micromagnetic simulation.…
The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in…
Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…