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Related papers: Intrinsic interface states in InAs-AlSb heterostru…

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In Hermitian systems, according to the bulk-edge correspondence interfacing two topological optical media with different bulk topological numbers implies the existence of edge states, which can trap light at the interface. However, such a…

Optics · Physics 2021-12-21 Stefano Longhi

When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy…

Barrier planes described by the Ionic Hubbard model and sandwiched between metallic planes on both sides are studied using unrestricted Hartree Fock. For zero onsite correlation, the presence of the metallic interface generates an…

Strongly Correlated Electrons · Physics 2011-04-20 Tribikram Gupta , Sanjay Gupta

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a…

Materials Science · Physics 2016-05-23 Qihang Liu , Xiuwen Zhang , L. B. Abdalla , Alex Zunger

We have calculated electronic and optical properties of Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$ tight-binding method. Tight-binding parameters and band bowing of BeSe$_{0.41}$Te$_{0.59}$ are considered…

Materials Science · Physics 2009-07-01 Titus Sandu W. P. Kirk

We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological…

We present an atomistic investigation of the influence of strain on the electronic properties of quantum dots (QD's) within the empirical $s p^{3} s^{*}$ tight-binding (ETB) model with interactions up to 2nd nearest neighbors and spin-orbit…

Materials Science · Physics 2009-11-10 R. Santoprete , Belita Koiller , R. B. Capaz , P. Kratzer , Q. K. K. Liu , M. Scheffler

We have studied the In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As (001) interface using first-principles ab-initio pseudopotential calculations, focusing on the effects of alloy composition and strain state on the electronic properties. In…

Materials Science · Physics 2011-12-30 A. Stroppa , M. Peressi

The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase…

On the basis of density functional calculations and using Bader's atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable…

Materials Science · Physics 2019-04-11 Zahra Nourbakhsh , Hadi Akbarzadeh

We have derived new boundary conditions on wave function at the normal metal / superconductor (NS) interface beyond effective mass approximation. These conditions are based on tight-binding approach and enable one to formulate quantitative…

Superconductivity · Physics 2012-10-05 A. V. Burmistrova , I. A. Devyatov , Alexander A. Golubov , Keiji Yada , Yukio Tanaka

Interface states at a boundary between regions with different spin-orbit interactions (SOIs) in two-dimensional (2D) electron systems are investigated within the one-band effective mass method with generalized boundary conditions for…

Mesoscale and Nanoscale Physics · Physics 2011-09-21 Aleksei A. Sukhanov , Vladimir A. Sablikov

We investigate the spectrum and structure of two-heavy bosonic impurities immersed in a light-boson system in D dimensions by means of the Born-Oppenheimer approximation. The fractional dimension dependence are associated with squeezed…

Atomic Physics · Physics 2022-09-02 R. M. Francisco , D. S. Rosa , T. Frederico

Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance…

Mesoscale and Nanoscale Physics · Physics 2016-11-26 Kyoichi Suzuki , Yuichi Harada , Koji Onomitsu , Koji Muraki

Topological interface states in one-dimensional superlattices provide spatially localized phonon modes protected by the topology of the underlying band structure. In GaAs/AlAs distributed Bragg reflectors (DBRs), such states can be…

Mesoscale and Nanoscale Physics · Physics 2026-05-14 S. Sandeep , O. Colmegna , C. Xiang , E. R. Cardozo de Oliveira , K. Papatryfonos , M. Morassi , A. Lemaitre , N. D. Lanzillotti-Kimura

An intrinsic gap depression at the Superconductor-Insulator interface due to the very short value of the coherence length in High-Tc Superconductors [HTSs] is considered, in the framework of a mixed (s+id)-wave pair symmetry for the order…

Superconductivity · Physics 2009-10-30 G. A. Ummarino , R. S. Gonnelli , C. Bravi , V. A. Stepanov

We investigate theoretically the PbTe/PbSnTe heterostructure grown in [111] direction, specifically a quantum wall (potential step of width d) of PbTe embedded in Pb_{1-x}Sn_{x}Te. For x large enough to lead to band inversion, and for large…

Mesoscale and Nanoscale Physics · Physics 2012-06-01 Ryszard Buczko , Łukasz Cywiński

We report the observation of a premelting transition at chemically sharp solid-liquid interfaces using molecular-dynamics simulations. The transition is observed in the solid-Al/liquid-Pb system and involves the formation of a liquid…

Materials Science · Physics 2015-06-12 Yang Yang , Mark Asta , Brian B. Laird

Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material…

The energy bands and the global density of states are computed for superconductor / normal-metal superlattices in the clean limit. Dispersion relations are derived for the general case of insulating interfaces, including the mismatch of…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Mihajlo Vanevic , Zoran Radovic