Related papers: High Performance Field-Effect Transistor Based on …
A high power factor and low lattice thermal conductivity are two essential ingredients of highly efficient thermoelectric materials. Although monolayers of transition metal dichalcogenides possess high power factors, high lattice thermal…
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics…
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…
V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited…
High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these…
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length…
Superconductors based on transition metal dichalcogenides are of substantial current relevance, towards attaining topological superconductivity. Here we report a detailed study on the synthesis and electromagnetic characterization of…
The gold film (mean thickness $\approx$ 3.5 nm) was condensed in high vacuum at temperature 70 K on single-crystal sapphire substrate. The transport properties of the film at low temperature reveal simultaneously indications of 1D and 2D…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge,…
Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of…
Two-dimensional materials are considered for future quantum devices and are usually produced by extensive methods like molecular beam epitaxy. We report on the fabrication of field-effect transistors using individual ultra-thin lead sulfide…
While the promise of clean and defect-free $\textrm{MoS}_{2}$ nanotubes as quantum electronic devices is obvious, ranging from strong spin-orbit interaction to intrinsic superconductivity, device fabrication still poses considerable…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging…
We report measurements of the transport and the magnetic properties of high-quality, sub-millimeter-sized MgB2 single crystals with clear hexagonal-plate shapes. The low-field magnetization and the magnetic hysteresis curves show the vortex…