Related papers: Laser doping for ohmic contacts in n-type Ge
$\beta$-Ga$_2$O$_3$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the…
We report significant changes of optical conductivity in single layer graphene induced by mild oxygen plasma exposure, and explore the interplay between carrier doping, disorder, and many-body interactions from their signatures in the…
Based on a self-consistent $t$-matrix approximation, we explore the influence of magnetic and nonmagnetic doping on the surface electronic states and conductivity of topological insulators. We show that warping parameter has a crucial…
We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping…
Doping asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type doping because of…
Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent…
Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is destroyed is not available on a defect…
DyMn$_2$O$_5$ is an intriguing multiferroic material showing multiple magnetic, electric and structural transitions. We present here the systematic study on the effect of Sr doping at the Dy site of DyMn$_2$O$_5$ through magnetic and…
The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated…
Application of pressures or electron-doping through Co substitution into Fe sites transforms the itinerant antiferromagnet BaFe(2)As(2) into a superconductor with the Tc exceeding 20K. We carried out systematic transport measurements of…
Chemical doping has recently become a very important strategy to induce superconductivity especially in complex compounds. Distinguished examples include Ba-doped La$_2$CuO$_4$ (the first high temperature superconductor), K-doped BaBiO$_3$,…
The paper compares the K-dependence of the superconducting gap in different doping ranges. The fine behavior of the leading edge gap indicates that the pairing susceptibility is peaked at special regions on the Fermi surface. These hot…
A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si…
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…
Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…
We have theoretically investigated the electronic properties of neutral and $n$-doped dangling bond (DB) quasi-one-dimensional structures (lines) in the Si(001):H and Ge(001):H substrates with the aim of identifying atomic-scale…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…
Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…
The in-plane London penetration depth, $\Delta\lambda(T)$, was measured using a tunnel diode resonator technique in single crystals of Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ with doping levels $x$ ranging from heavily underdoped, $x$=0.16…
The in-plane penetration depth of Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density…