Related papers: High gain two-stage amplifier with positive capaci…

A line driver with configurable pre-emphasis is implemented in a 65 nm CMOS process. The driver utilizes a three-tap feed-forward equalization (FFE) architecture. The relative delays between the taps are selectable in increments of 1/16th…

With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the…

We construct an amplifier that interpolates between a nondeterministic, immaculate linear amplifier and a deterministic, ideal linear amplifier and beyond to nonideal linear amplifiers. The construction involves cascading an immaculate…

Cavity combiners have been put forward for high power combining due to their advantages of larger combining ability, variable input channels and less power loss. For a high power cavity combiner, it is better to keep the power loss ratio in…

An LCL filter offers superior attenuation for high-frequency harmonics for three-phase grid-following inverters compared to LC and L filters. However, it also introduces an inherent resonance peak, which can lead to power quality issues or…

As a result of improvements in power semiconductors, moderate frequency switching supplies can now provide the hundreds of amps typically required by accelerators with zero-to-peak noise in the kHz region ~0.06% in current or voltage mode.…

This paper reports the design and experimental characterization of a cryogenic compact low-power 60GHz amplifier for control of electron/hole spin qubits, as elementary building block for monolithic Si quantum processors. Tested at 2 K, the…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…

This paper presents a simulation approach to enhance the power quality of a PV-micro hydro grid supplying both linear consumer load and non-linear industrial load by integrating Shunt Active Power Filter (SAPF), utilizing instantaneous PQ…

We have developed a coupled-mode analysis framework for superconducting travelling-wave parametric amplifiers using the full Telegrapher's equations to incorporate loss-related behaviour. Our model provides an explanation of previous…

This paper describes a CMOS analogy voltage supper buffer designed to have extremely low static current Consumption as well as high current drive capability. A new technique is used to reduce the leakage power of class-AB CMOS buffer…

In this paper a low power and low area array multiplier with carry save adder is proposed. The proposed adder eliminates the final addition stage of the multiplier than the conventional parallel array multiplier. The conventional and…

We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog front end…

Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…

This paper proposes a low-power and low-noise instrumentation amplifier (IA) tailored for bioimpedance sensing applications. The design originates from a gain-boosted flipped voltage follower (FVF) transconductance (TC) stage and integrates…

Non-reciprocal devices, which have different transmission coefficients for propagating waves in opposite directions, are crucial components in many low noise quantum measurements. In most schemes, magneto-optical effects provide the…

A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further…

Power consumption has emerged as a primary design constraint for integrated circuits (ICs). In the Nano meter technology regime, leakage power has become a major component of total power. Full adder is the basic functional unit of an ALU.…

The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch…

This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator. The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator. Using a…