Related papers: High confinement, high yield Si3N4 waveguides for …
In this paper, a silicon rich nitride-lithium niobate on insulator (SRN-LNOI) hybrid platform with waveguides and several key components is proposed. The propagation loss of the silicon rich nitride-lithium niobate rib-loaded waveguide (1…
Aluminum nitride (AlN) has emerged as a leading platform for integrated photonics in the visible and ultraviolet spectral ranges, particularly for quantum information applications involving trapped atoms. However, achieving low propagation…
We report the experimental demonstration of a class of ultrasonic metasurfaces made of patterned silicon thin wafers partially covered by Si3N4 film that exhibit over 24 dB of sound transmission loss around 0.7 MHz, which is caused by the…
Chip-integrated optical frequency combs (OFCs) based on Kerr nonlinear resonators are of great significance given their scalability and wide range of applications. Broadband on-chip OFCs reaching visible wavelengths are especially valuable…
Visible light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging and displays. Among the existing photonic…
The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation…
In the past decade, photonic integrated circuits (PICs) based on thin-film lithium niobate (TFLN) have advanced in various fields, including optical communication, nonlinear photonics, and quantum optics. A critical component is an…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
Amorphous materials offer unique functional characteristics, which are often not observed in their crystalline counterparts. This makes them invaluable for many technological applications, such as diffusion barriers in semiconductor…
Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…
Recent years have witnessed significant developments in the study of nonlinear properties of various optical materials at the nanoscale. However, in most cases experimental results on harmonic generation from nanostructured materials are…
We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the…
We demonstrate an ultra-compact waveguide taper in Silicon Nitride platform. The proposed taper provides a coupling-efficiency of 95% at a length of 19.5 um in comparison to the standard linear taper of length 50 um that connects a 10 um…
Millimeter-wave superconducting devices offer a platform for quantum experiments at temperatures above 1 K, and new avenues for studying light-matter interactions in the strong coupling regime. Using the intrinsic nonlinearity associated…
Integrated silicon nitride (Si3N4) resonators have emerged as a leading platform for nonlinear photonics, yet generating light at wavelength in the ultraviolet (UV) has remained elusive in single-resonator systems. Here we report the first…
We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the…
The lack of a bulk second-order nonlinearity (\c{hi}(2)) in silicon nitride (Si3N4) keeps this low-loss, CMOS-compatible platform from key active functions such as Pockels electro-optic (EO) modulation and efficient second harmonic…
We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output…
The observation that the thermal conductivity of single-crystalline silicon nanowires with diameter on the length scale of 25 nm is lower than that of bulk material by two orders of magnitude has attracted the interest onto silicon as a…
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin…