Related papers: Magnetoresistance in multilayer fullerene spin val…
Transport and magnetic studies of Ca3Ru2O7 for temperatures ranging from 0.4 K to 56 K and magnetic fields, B, up to 45 T leads to strikingly different behavior when the field is applied along the different crystal axes. A ferromagnetic…
We report an improved fabrication scheme for carbon based nanospintronic devices and demonstrate the necessity for a careful data analysis to investigate the fundamental physical mechanisms leading to magnetoresistance. The processing with…
The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…
Theoretical study of mutual orientation of fullerene $C_{60}$ molecule atom spins is presented in this work. Spin-spin interaction was described by Habbard's model. Existence of antiferromagnetic sturcture of spin sub-system in ground state…
We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's…
Conjugated polymers exhibit unique spin-dependent phenomena arising from weak yet critical hyperfine interactions. Understanding these spin effects, particularly the spin-dependent formation and decay of correlated spin pairs, is important…
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied…
Towards a novel magnetoresistance (MR) device with a carbon nanotube, we propose ``nonmagnetic metal/zigzag nanotube encapsulating magnetic atoms/nonmagnetic metal'' junctions. We theoretically investigate how spin-polarized edges of the…
Magnetoelectronics is mainly digital, i.e. governed by up and down magnetizations. In contrast, analogue magnetoelectronics makes use of phenomena occuring for non-collinear magnetization configurations. Here we review theories which have…
Since the discovery of the fascinating properties in magic-angle graphene, the exploration of moir\'e systems in other two-dimensional materials has garnered significant attention and given rise to a field known as 'moir\'e physics'. Within…
The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The…
Ultrafast demagnetization induced by femtosecond laser pulses in thin metallic layers is caused by the outflow of spin-polarized hot electron currents describable by the superdiffusive transport model. These laser-generated spin currents…
This paper has two parts. The first part uses a single point of view to discuss the reflection and averaging mechanisms of spin-transfer between current-carrying electrons and the ferromagnetic layers of magnetic/non-magnetic…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel…
Recent demonstrations of magnetic ordering and spin transport in two-dimensional heterostructures have opened research venues in these material systems. In order to control and enhance the related physical phenomena, quantitative…
Heavy metals are key to spintronics because of their high spin-orbit coupling (SOC) leading to efficient spin conversion and strong magnetic interactions. When C60 is deposited on Pt, the molecular interface is metallised and the spin Hall…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…
Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and…