Related papers: Radiation-enhanced diffusion of impurity atoms in …
Motivated by the recent experiment by Marguerite et al. [1] on imaging in graphene samples, we investigate theoretically the dissipation induced by resonant impurities in the quantum Hall regime. The impurity induced forward scattering of…
The continuous need towards improving the capacity of magnetic storage devices requires materials with strong perpendicular magnetic anisotropy. FePd, CoPd and their Co(Fe)Pt counterparts very attractive candidate for such purposes. The…
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…
Particle-in-cell (PIC) simulations of collisionless jets of electrons and positrons in an ambient electron-proton plasma have revealed an acceleration of positrons at the expense of electron kinetic energy. The dominant instability within…
Based on recent calculations of the self-diffusion (SD) coefficient in amorphous silicon (a-Si) by classical Molecular Dynamics simulation [M. Posselt, H. Bracht, and D. Radi\'c, J. Appl. Phys. 131, 035102 (2022)] detailed investigations on…
Present divertor concepts for next step experiments such ITER and TPX rely upon impurity and hydrogen radiation to transfer the energy from the edge plasma to the main chamber and divertor chamber walls. The efficiency of these processes…
Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost…
Plasma detachment involves interactions of the plasma with impurities and neutral particles, leading to significant losses of plasma power, momentum, and particles. Accurate mapping of plasma emissivity in the divertor and X-point region is…
The processes of energy gain and redistribution in a dense gas subject to an intense ultrashort laser pulse are investigated theoretically for the case of high-pressure argon. The electrons released via strong-field ionization and driven by…
Although ultrafast laser materials processing has advanced at a breakneck pace over the last two decades, most applications have been developed with laser pulses at near-IR or visible wavelengths. Recent progress in mid-infrared (MIR)…
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…
In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame…
Using Localized Surface Plasmon Resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to…
A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on…
The ion-sputtering induced transient enhanced intermixing has been studied by molecular dynamics (MD) simulations in Pt/Ti and its anomalous nature has been explained as a superdiffusive transient enhanced interdiffusion. We find ballistic…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color…
Anomalous inter-layer atomic transport of deposited impurity atoms on Al(111) has been found by constant temperature molecular dynamics simulations. The low-energy deposition of Pt on Al(111) leads to oscillatory adsorbate-substrate…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
Applying focused ion beam (FIB) nanotomography and Rutherford backscattering spectroscopy (RBS) to dealloyed platinum-aluminum thin films an in-depth analysis of the dominating physical mechanisms of porosity formation during the dealloying…