Related papers: Radiation-enhanced diffusion of impurity atoms in …
We studied the excitation process of silicon under an intense double pulse. We employed the three-temperature (electron, hole, and lattice) model (3TM) together with Maxwell's equations. We solved Maxwell's equations by the…
The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…
The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,\mu s}$, corresponding to Q = 5 million, and a highest observed value of ${501\,\mu s}$. We use materials analysis…
Tuning of the electronic properties of pre-synthesized colloidal semiconductor nanocrystals (NCs) by doping plays a key role in the prospect of implementing them in printed electronics devices such as transistors, and photodetectors. While…
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A…
We describe the process of Foerster transfer between semiconductor nanoparticles in the presence of a metal subsystem (metal nanocrystals). In the presence of metal nanocrystals, the Foerster process can become faster and more long-range.…
In view of applications to electron-positron pair-plasmas and fullerene pair-ion-plasmas containing charged dust impurities a thorough discussion is given of three-component Plasmas. Space-time responses of multi-component linearized Vlasov…
The diffusion path and diffusivity of oxygen in crystalline silicon are computed using an empirical interatomic potential which was recently developed for modelling the interactions between oxygen and silicon atoms. The diffusion path is…
In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum…
We study the collective photon decay of multiple quantum emitters embedded in a thin high-index dielectric layer such as hexagonal boron nitride (hBN), with and without a metal substrate. We first explore the significant role that guided…
To characterize the conditions required to reach advanced divertor regimes, a one-dimensional computational model has been developed based on a coordinate transformation to incorporate two-dimensional effects. This model includes transport…
Plasmon and polariton modes are derived for an ideal semi-infinite (half-space) plasma and an ideal plasma slab by using a general, unifying procedure, based on equations of motion, Maxwell's equations and suitable boundary conditions.…
We consider light propagation in a silicon dioxide substrate with implanted ${\mathrm{Er}}^{3+}$ ions and silver nanoparticles that are randomly and homogeneously distributed in the substrate. When their densities are large enough, the…
Irradiation of a solid with intense plasma ion beams produced by Rod Plasma Injector is a strongly nonequilibrium process, which enables achieving a number of effects which are impossible to be achieved with other method. In the paper, the…
We show theoretically that an intense femtosecond optical pulse incident normally on a metal surface tends to decay into a pair of counter-propagating surface plasmon-polaritons (SPPs). The interference field heats the medium periodically,…
The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon…
The interaction of ultraintense laser pulses with solids is largely affected by the plasma gradient at the vacuum-solid interface, which modifies the absorption and ultimately, controls the energy distribution function of heated electrons.…
Dislocations can climb out of their glide plane by absorbing (or emitting) point defects (vacancies and self-interstitial atoms (SIAs)). In contrast with conservative glide motion, climb relies on the point defects' thermal diffusion and…
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels…