Related papers: Tunable Antenna Coupled Intersubband Terahertz Det…
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We…
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…
An interdigitated photoconductive antenna (i-PCA) for terahertz (THz) emission with a novel metal-insulator-semiconductor interface is designed with the aim of developing compact and scalable THz devices. The photoconductive material is an…
In this paper, we evaluate the viability of CubeSats as an attractive platform for lightweight instrumentation by describing a proof of concept CubeSat that houses an astrophotonic chip for transit spectroscopy-based exoplanet atmosphere…
I report on the experimental observation of DC instability and self-amplification through stimulated emission of 0.2 and 1.63 THz radiation using InGaAs/GaAs HEMT operating in the deep saturation regime at room temperature. I demonstrate…
The Terahertz (0.1-10 THz) band holds enormous potential for supporting unprecedented data rates and millimeter-level accurate sensing thanks to its ultra-broad bandwidth. Terahertz integrated sensing and communication (ISAC) is viewed as a…
We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz…
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The…
High-frequency terahertz (THz) detectors are vital for next-generation high-speed wireless communication systems. Graphene, with its high carrier mobility, broadband absorption, and weak electron-phonon coupling, offers great promise for…
It is reported that terahertz radiation from 0.69 THz to 2.54 THz has been sensitively detected in a device consisting of bundles of metallic carbon nanotubes, quasi-optically coupled through a lithographically fabricated antenna, and a…
Recently, phase-change materials (PCMs) have drawn more attention due to the dynamically tunable optical properties. Here, we investigate the active control of electromagnetically induced transparency (EIT) analogue based on terahertz (THz)…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
In this paper, we will introduce a new designed direct conversion terahertz detector and we will compare its characteristics with a prefabricated design in order to obtain better performance of our new proposed design. Differences between…
Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and…
We have measured coherent terahertz emission spectra from Bi2Sr2CaCu2O8+\delta\ mesa devices, as a function of temperature and mesa bias voltage. The emission frequency is found to be tunable by up to 12% by varying the temperature and bias…
Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a…
Integrating a thermopile with a low power operational amplifier is an effective and cost-efficient approach to obtain a high performance compact Terahertz power detector. Here we present the development of such an integrated detector,…
The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. Plasmon in two-dimensional electron gas (2DEG) has long been…
Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first…