Related papers: Tunable Antenna Coupled Intersubband Terahertz Det…
A fast, voltage-tunable terahertz mixer based on the intersubband transition of a high-mobility 2-dimensional electron gas (2DEG) has been fabricated from a single 40 nm GaAs-AlGaAs square quantum well heterostructure. The device is called…
Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz.…
At present, nearly quantum-limited heterodyne receivers for Terahertz (THz) frequencies require cooling to temperatures below 4K. We are working to build semiconductor-based "tunable antenna-coupled intersubband terahertz" (TACIT)…
Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a…
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors. Here we report…
The response of an ungated two-dimensional electron gas(2DEG) to an external electromagnetic excitation is analyzed. The possibility of creating a single-mode resonance detector operating in the terahertz frequency range is demonstrated.
Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is…
The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems…
We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…
In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs…
Developing low-power, high-sensitivity photodetectors for the terahertz (THz) band that operate at room temperature is an important challenge in optoelectronics. In this study, we introduce a photo-thermal-electric (PTE) effect detector…
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers…
We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the…
A proof of concept for high speed near-field imaging with sub-wavelength resolution using SLM is presented. An 8 channel THz detector array antenna with an electrode gap of 100 um and length of 5 mm is fabricated using the commercially…
Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great…
We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…
The development of wearable devices for terahertz (THz) integrated sensing and communication (ISAC) is pivotal for forthcoming 6G Internet of Things (IoT) and wearable optoelectronics. However, existing THz system suffers from bulkiness,…
The sixth generation (6G) wireless networks aim to achieve ultra-high data transmission rates, very low latency and enhanced energy-efficiency. To this end, terahertz (THz) band is one of the key enablers of 6G to meet such requirements.…