Related papers: Magnetoresistance in two-component systems
We theoretically studied the quasiparticle transport in a 2D electron gas biased in the quantum Hall regime and in the presence of a lateral potential barrier. The lateral junction hosts the specific magnetic field dependent quasiparticle…
The valley-contrasting geometric features of electronic wave functions manifested in Berry curvature and orbital magnetic moment have profound consequences on magnetotransport properties in both three- and two-dimensional systems. Although…
Developments in the physics of 2D electron systems during the last decade have revealed a new class of nonequilibrium phenomena in the presence of a moderately strong magnetic field. The hallmark of these phenomena is magnetoresistance…
In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electron-like and hole-like carriers. However, it rarely…
Several early transition metal dipnictides have been found to host topological semimetal states and exhibit large magnetoresistance. In this study, we use angle-resolved photoemission spectroscopy (ARPES) and magneto-transport to study the…
We investigate quantum dynamics and kinetics of a 2D conductor with closed Fermi surface reconstructed by a biaxial density wave, in which electrons move along a two-dimensional periodic net of semiclassical trajectories coupled by the…
We study the quasiclassical magnetotransport of non-interacting fermions in two dimensions moving in a random array of strong scatterers (antidots, impurities or defects) on the background of a smooth random potential. We demonstrate that…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…
A topological insulator doped with random magnetic impurities is studied. The system is modelled by the Kane-Mele model with a random spin exchange between conduction electrons and magnetic dopants. The dynamical mean field theory for…
By measuring magnetoresistance and Hall effect in classically moderate perpendicular magnetic field in Si-MOSFET-type macroscopic antidot array we found a novel effect: nonlinear with field, temperature- and density-dependent Hall…
By numerical simulation, we study the classical magnetoresistance of two-dimensional electrons in the presence of weak short range scattering. A critical magnetic field defines the percolation threshold, above which the longitudinal…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
At low temperature and for finite spin scattering in a weakly disordered metal, for a certain value, predicted from our theory, of the material-dependent paramagnon interaction, the total conductivity becomes highly sensitive to the orbital…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
The scaling of $H$-linear magnetoresistance in field and temperature was measured in under-doped (x = 0.19) and optimally-doped (x=0.31)~BaFe$_2$(As$_{1-x}$P$_x$)$_2$. We analyze the data based on an orbital model in the presence of…
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…
Electron-hole (e-h) compensation is a hallmark of multi-band semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with…
We consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform…
Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the…