Related papers: Redesigning Commercial Floating-Gate Memory for An…
This paper presents a novel architecture utilizing a 10T SRAM cell for XNOR-based in-memory computing, aimed at mitigating the extensive routing challenges typically encountered in conventional in-memory computing systems. By integrating a…
Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…
This paper proposes the implementation of programmable threshold logic gate (TLG) crossbar array based on modified TLG cells for high speed processing and computation. The proposed TLG array operation does not depend on input signal and…
Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…
This paper presents a programmable in-memory-computing processor, demonstrated in a 65nm CMOS technology. For data-centric workloads, such as deep neural networks, data movement often dominates when implemented with today's computing…
Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area and speed of million-gate spin FPGA are numerically…
Edge devices are being deployed at increasing volumes to sense and act on information from the physical world. The discrete Fourier transform (DFT) is often necessary to make this sensed data suitable for further processing -- such as by…
Floating gate SONOS (Silicon-Oxygen-Nitrogen-Oxygen-Silicon) transistors can be used to train neural networks to ideal accuracies that match those of floating point digital weights on the MNIST dataset when using multiple devices to…
Compute-in-memory (CIM) has shown significant potential in efficiently accelerating deep neural networks (DNNs) at the edge, particularly in speeding up quantized models for inference applications. Recently, there has been growing interest…
Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…
Large-scale floating-point matrix multiplication is a fundamental kernel in many scientific and engineering applications. Most existing work only focus on accelerating matrix multiplication on FPGA by adopting a linear systolic array. This…
In todays world, high-power computing applications such as image processing, digital signal processing, graphics, and robotics require enormous computing power. These applications use matrix operations, especially matrix multiplication.…
Deep neural network (DNN) inference relies increasingly on specialized hardware for high computational efficiency. This work introduces a field-programmable gate array (FPGA)-based dynamically configurable accelerator featuring systolic…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
The speed of modern digital systems is severely limited by memory latency (the ``Memory Wall'' problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic--In--Memory (LiM)…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced…
Memory accounts for a considerable portion of the total power budget and area of digital systems. Furthermore, it is typically the performance bottleneck of the processing units. Therefore, it is critical to optimize the memory with respect…
Computation-in-Memory (CiM) is attracting attention as a technology that can perform MAC calculations required for AI accelerators, at high speed with low power consumption. However, there is a problem regarding power consumption and…