Related papers: Ambipolar quantum dots in intrinsic silicon
We discuss the properties of few electrons and electron-hole pairs confined in coupled semiconductor quantum dots, with emphasis on correlation effects and the role of tunneling. We shall discuss, in particular, exact diagonalization…
The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…
We theoretically investigate the Stark shift of the exciton goundstate in two vertically coupled quantum dots as a function of the interdot distance. The coupling is shown to enhance the tuneability of the linear optical properties,…
We study theoretically a quantum dot in the quantum Hall regime that is strongly coupled to a single lead via a point contact. We find that even when the transmission through the point contact is perfect, important features of the Coulomb…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the…
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
We investigate the effect of a quantised vibrational mode on electron tunneling through a chain of three quantum dots. The outer dots are coupled to voltage leads, but the position of the central dot is not rigidly fixed. Motion of the…
We theoretically study electronic transport through a layer of quantum dots connecting two metallic leads. By the inclusion of an inductor in series with the junction, we show that steady electronic transport in such a system may be…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We present measurements of transport through two tunnel-coupled quantum dots of different sizes connected in series in a strong, variable, perpendicular magnetic field. Double dot conductance was measured both as a function of magnetic…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly…
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle…
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend…
A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…