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We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 R. L. Willett , L. N. Pfeiffer , K. W. West

Understanding the electrodes' surface morphology influence on the ions' distribution is essential for designing the supercapacitors with enhanced energy density characteristics. We develop a model for the structure of electrolytes near the…

Statistical Mechanics · Physics 2021-06-30 Timur Aslyamov , Konstantin Sinkov , Iskander Akhatov

Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent…

We investigate the surface electronic structure and thermodynamic stability of the SrTiO3 (111) slabs using density functional theory. We observe that, for Ti-terminated slabs it is indeed possible to create a two-dimensional electron gas…

Materials Science · Physics 2015-06-16 N. Sivadas , H. Dixit , Valentino R. Cooper , Di Xiao

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel…

Mesoscale and Nanoscale Physics · Physics 2018-01-24 Trevor A. Petach , K. V. Reich , Xiao Zhang , Kenji Watanabe , Takashi Taniguchi , B. I. Shklovskii , David Goldhaber-Gordon

Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of {\gamma}-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system…

In this work, we patterned a two-dimensional electron gas (2DEG) on the surface of a SrTiO$_3$ thin film grown homoepitaxially on SrTiO$_3$ by hybrid molecular beam epitaxy (hMBE). We explored the superconducting dome in this material…

Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced…

We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…

Mesoscale and Nanoscale Physics · Physics 2018-07-25 Marc Philippi , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

Mesoscale and Nanoscale Physics · Physics 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

The heterointerfaces at complex oxides have emerged as a promising platform for discovering novel physical phenomena and advancing integrated sensing, storage, and computing technologies. Nevertheless, achieving precise control over a…

Materials Science · Physics 2025-09-01 Jiaxin Lv , Silan Li , Chenhao Duan , Shuanhu Wang , Hong Yan , Kexin Jin

We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is…

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation…

We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with…

Mesoscale and Nanoscale Physics · Physics 2021-06-03 Lev V. Ginzburg , Carolin Gold , Marc P. Röösli , Christian Reichl , Matthias Berl , Werner Wegscheider , Thomas Ihn , Klaus Ensslin

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T structure. Here, we report on the electrical transport…

Strontium titanate is a wide-gap semiconductor avoiding a ferroelectric instability thanks to quantum fluctuations. This proximity leads to strong screening of static Coulomb interaction and paves the way for the emergence of a very dilute…

Superconductivity · Physics 2018-11-27 Clément Collignon , Xiao Lin , Carl Willem Rischau , Benoît Fauqué , Kamran Behnia

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic…

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…

Mesoscale and Nanoscale Physics · Physics 2011-06-16 C. Rossler , T. Feil , P. Mensch , T. Ihn , K. Ensslin , D. Schuh , W. Wegscheider

Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…

Superconductivity · Physics 2022-12-27 Haoran Wei , Shengru Chen , Yuting Zou , Yuxin Wang , Meng Yang , Qinghua Zhang , Lin Gu , Kun Jiang , Er-Jia Guo , Zhi Gang Cheng