Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

Nikos Papadopoulos; Eduardo Flores; Kenji Watanabe; Takashi Taniguchi; Jose R. Ares; Carlos Sanchez; Isabel J. Ferrer; Andres Castellanos-Gomez; Gary A. Steele; Herre S. J. van der Zant

doi:10.1088/2053-1583/ab4ef3

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

Materials Science 2020-04-09 v1 Mesoscale and Nanoscale Physics

Authors: Nikos Papadopoulos , Eduardo Flores , Kenji Watanabe , Takashi Taniguchi , Jose R. Ares , Carlos Sanchez , Isabel J. Ferrer , Andres Castellanos-Gomez , Gary A. Steele , Herre S. J. van der Zant

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Abstract

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS $_3$ ) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$ 60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

Keywords

electronic transport tis3 nanosheets hexagonal boron nitride charge density wave encapsulation back-gate

Cite

@article{arxiv.2004.03687,
  title  = {Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets},
  author = {Nikos Papadopoulos and Eduardo Flores and Kenji Watanabe and Takashi Taniguchi and Jose R. Ares and Carlos Sanchez and Isabel J. Ferrer and Andres Castellanos-Gomez and Gary A. Steele and Herre S. J. van der Zant},
  journal= {arXiv preprint arXiv:2004.03687},
  year   = {2020}
}

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

Abstract

Keywords

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