Related papers: Nanoscale Electrostatic Control of Oxide Interface…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam…
The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkable variety of electronic behavior associated with the formation of an interfacial quasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of charge on…
The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating…
We have investigated electrical transport in a diffusive multiwalled carbon nanotube contacted using superconducting leads made of Al/Ti sandwich structure. We find proximity-induced superconductivity with measured critical currents up to…
In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with…
Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical…
Superconductivity in SrTiO$_3$ occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here we demonstrate nanoscale weak links connecting superconducting…
We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the…
The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the…
Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined…
Superconductivity in strontium titanate has remained enigmatic for more than 50 years. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerface enables systematic dimensional confinement, from a two-dimensional electron gas to…
Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting…
Electron-beam deposition of an insulating granular aluminium or of an off-stoichiometric amorphous alumina layer on a $SrTiO_3$ surface is a simple way to get a metallic interface from insulating materials. No heating nor specific…
The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and…
The recent discovery of superconducting interfaces in the $KTaO_3 (111)$-based heterostructures is intriguing, since a much higher superconducting critical temperature (TC ~ 2 K) is achieved compared to that in the $SrTiO_3$…
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
We study the superconducting critical fields of two-dimensional electron systems at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces as a function of electrostatic back-gating. Our work reveals inplane critical fields of unprecedented magnitudes…
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and…