The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkable variety of electronic behavior associated with the formation of an interfacial quasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of charge on the top LaAlO3 surface, the LaAlO3/SrTiO3 interface conductance can be controlled with near-atomic spatial resolution. Using this technique, a sketch-based oxide nanotransistor (SketchFET) was demonstrated with a minimum feature size of just two nanometers. Here we report direct measurements of the potential barriers and electronic coupling between nanowire segments within a SketchFET device. Near room temperature, switching is governed by thermally activated field emission from the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.
@article{arxiv.1009.1893,
title = {Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor},
author = {Cheng Cen and Daniela F. Bogorin and Jeremy Levy},
journal= {arXiv preprint arXiv:1009.1893},
year = {2015}
}