Related papers: Writing on dirty flash memory
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…
Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error mechanisms. To compensate for growing error rates, both memory…
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied…
Flash memory is widely used as the secondary storage in lightweight computing devices due to its outstanding advantages over magnetic disks. Flash memory has many access characteristics different from those of magnetic disks, and how to…
Differentiable Search Indices (DSIs) encode a corpus of documents in model parameters and use the same model to answer user queries directly. Despite the strong performance of DSI models, deploying them in situations where the corpus…
Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash memory uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip. This allows 3D NAND flash memory to increase storage density…
Memory-augmented neural networks consisting of a neural controller and an external memory have shown potentials in long-term sequential learning. Current RAM-like memory models maintain memory accessing every timesteps, thus they do not…
This paper considers coding for so-called partially stuck (defect) memory cells. Such memory cells can only store partial information as some of their levels cannot be used fully due to, e.g., wearout. First, we present new constructions…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
In this paper, we study a model, which was first presented by Bunte and Lapidoth, that mimics the programming operation of memory cells. Under this paradigm we assume that cells are programmed sequentially and individually. The programming…
The recently proposed set-up of source coding with a side information "vending machine" allows the decoder to select actions in order to control the quality of the side information. The actions can depend on the message received from the…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…
Content Addressable Memories (CAMs) are considered a key-enabler for in-memory computing (IMC). IMC shows order of magnitude improvement in energy efficiency and throughput compared to traditional computing techniques. Recently, analog CAMs…
Dirty paper coding (DPC) is a classical problem in information theory that considers communication in the presence of channel state known only at the transmitter. While the theoretical impact of DPC has been substantial, practical…
The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While…
The "writing dirty paper" capacity result crucially dependents on the perfect channel knowledge at the transmitter as the presence of even a small uncertainty in the channel realization gravely hampers the ability of the transmitter to…
Racetrack memory is a new technology which utilizes magnetic domains along a nanoscopic wire in order to obtain extremely high storage density. In racetrack memory, each magnetic domain can store a single bit of information, which can be…