Related papers: Complex oxide growth using simultaneous in situ RH…
The epitaxial deposition of the first oxide buffer layer (seed layer) on biaxially textured Ni tape for coated conductors is a critical step that is dependent on the atomistic surface condition of the metal. We present a study of the…
We present a theory for the damping of layer-by-layer growth oscillations in molecular beam epitaxy. The surface becomes rough on distances larger than a layer coherence length which is substantially larger than the diffusion length. The…
The functional properties of devices based on perovskite oxides depend strongly on the growth modes that dramatically affect surface morphology and microstructure of the hetero-structured thin films. To achieve atomically flat surface…
We observed surface X-ray diffraction from He-4 submonolayers adsorbed on a single-surface graphite using synchrotron X-rays. Time evolutions of scattering intensities along the crystal truncation rod (CTR) were observed even after reaching…
Control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition,…
We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good…
We grew SrTiO3 on SrTiO3 [001] by pulsed laser deposition, while observing x-ray diffraction at the (0 0 .5) position. The drop dI in the x-ray intensity following a laser pulse contains information about plume-surface interactions.…
We study, using noise reduction techniques, layer by layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular…
In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and…
The evolution of RHEED reflexes intensity during reconstructed transitions characterizes (often implicitly) reconstructed surface state peculiarities. The approaches of a correct RHEED data interpretation, aimed at obtaining information…
We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical…
Synchrotron-based x-ray reflectivity is increasingly employed as an \textit{in situ} probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been…
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of…
Heteroepitaxial superlattices of [YBa2Cu3O7(n)/ La0.67Ca0.33MnO3(m)]x, where n and m are the number of YBCO and LCMO monolayers and x the number of bilayer repetitions, have been grown with pulsed laser deposition on NdGaO3 (110) and…
The formation of ordered phases of dimethyl-disulfide on the Au(111) surface has been investigated by means of Low-Energy Electron Diffraction (LEED), X-ray Photoemission Spectroscopy (XPS), and state-of-the-art Density Functional Theory…
Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well-controlled interfaces. The first part of this paper presents a review of several useful…
Pulsed laser deposition (PLD) is a popular growth method, which has been successfully used for fabricating thin films. Compared to continuous deposition (like molecular beam epitaxy) the pulse intensity can be used as an additional…
Using pulsed laser deposition and a unique fast quenching method, we have prepared SrCoOx epitaxial films on SiTiO3 substrates. As electrochemical oxidation increases the oxygen content from x = 2.75 to 3.0, the films tend to favor the…
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues…
We report that epitaxial Sr2IrO4 thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Sr_{n+1}Ir_{n}O_{3n+1}), conventional PLD methods…