Related papers: High performance solar cells based on graphene-GaA…
Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the…
Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently,…
Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use…
A solar cell design using the combination of titanium dioxide and graphite as active photon absorbing materials were proposed. The titanium dioxide absorbs photons of nearly ultraviolet wavelengths to produce electron hole pairs, while…
The selfconsistent model for the temperature dependence of photoconversion efficiency $\eta$ for highly efficient silicon solar cells (SCs) is developed. It is demonstrated that effect of the efficiency decrease due to increasing…
Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required…
The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of…
We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with…
Photogalvanic solar cells, the original dye based solar cell, have yet to fulfill their promise as a low fabrication cost, scalable energy conversion system. The efficient performance of photogalvanic cells relies on high dye solubility and…
We have fabricated 4-element Graphene/Silicon on Insulator (SOI) based Schottky barrier photodiode array ()PDA and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as common electrode…
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…
Perovskite (CH3NH3PbI3) solar cells have made significant advances recently. In this paper, we propose a bilayer heterojunction solar cell comprised of a perovskite layer combining with a IV-VI group semiconductor layer, which can give a…
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…
In our present work, five previously proposed sp$^3$ carbon crystals were suggested as silicon allotropes and their stabilities, electronic and optical properties were investigated by first-principles method. We find that these allotropes…
Placing graphene on SnS2 results in significant charge transfer, on the order of 10^13/cm^2, from the graphene to the SnS2, and the charge transfer results in a negative Schottky barrier contact for electron injection from the graphene into…
Vertically stacked two-dimensional (2D) graphene-based van der Waals (vdW) heterostructures have emerged as the technological materials for electronic and optoelectronic device applications. In this regard, for the first time, we…
The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We…
We propose a new triple-junction solar cell structure composed of a III-V heterojunction bipolar transistor solar cell (HBTSC) stacked on top of, and series-connected to, a Si solar cell (III-V-HBTSC-on-Si). The HBTSC is a novel…
A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barrier solar cells. The solar cells comprise a window, designed to reduce the reflection of…
In order to obtain higher conversion efficiency and to reduce production cost for amorphous silicon/crystalline silicon (a-Si/c-Si) based heterojunction solar cells, a Heterojunction of Amorphous silicon and Crystalline silicon with…