Related papers: Mobility enhancement and temperature dependence in…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
To reveal the nature of elementary excitations in a quantum spin liquid (QSL), we measured low temperature thermal conductivity and specific heat of 1T-TaS$_2$, a QSL candidate material with frustrated triangular lattice of spin-1/2. The…
Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…
In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carriers in such devices are expected to exhibit a higher…
Temperature dependencies for concentration and the Hall mobility of electrons for the $\textit{n}$-$\text{Ge} \langle \text{Sb}\rangle$ and \linebreak $\textit{n}$-$\text{Ge} \langle \text{Sb, Au}\rangle$ single crystals uniaxially deformed…
We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in…
Ambient humidity poses a significant challenge in the development of practical room temperature NO$_2$ gas sensors. Here, we employ atomically precise zigzag edges in multilayer MoS$_2$, fabricated using electron beam lithography and…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
High-mobility oxide heterostructures could be applied for high-frequency devices, transparent conductors, and spin-orbit logic devices. SrTiO$_3$ is one of the most studied oxide substrate materials for heterostructures. To date, the…
First principles density functional theory based calculations have been performed to investigate the strain and temperature induced tunability of the thermoelectric properties of monolayer (ML) MoS$_2$. Modifications in the electronic and…
The temperature variation of partial mobility and effective mobility for undoped p-GaSb have been calculated using Matthiessen rule. The effective mobility depends on the ionized, acoustic, polar optical and non-polar optical scattering…
We study the charged impurity limited mobility in black phosphorus, a highly anisotropic layered material. We compute the mobility within the Boltzmann transport equation under detailed balance condition, and taking into account the…
We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance…
SnO2 porous nanosolid (PNS) was prepared by a solvothermal hot-press method, and a new strategy was developed to improve its interfacial crystallinity and carrier mobility. It was found that the carrier mobility of SnO2 PNS was improved…
The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of…
The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility…
Interfacial thermal transport between electrodes and polymer electrolytes can play a crucial role in the thermal management of solid-state lithium-ion batteries (SLIBs). Modifying the electrode surface with functional molecules can…
We report measurements of excess electron mobility in dense Argon gas at the two temperatures $T=152.15$ and 162.30 K, fairly close to the critical one ($T_c =150.7$ K), as a function of the gas density $N$ up to 14 atoms$\cdot$nm$^{-3}$…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
We study hot-electron cooling by acoustic and optical phonons in monolayer MoS$_2$. The cooling power $P$ ($P_e = P/n$) is investigated as a function of electron temperature $T_e$ (0-500 $\mathrm{K}$) and carrier density $n$…