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Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a…

We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the…

Strongly Correlated Electrons · Physics 2018-10-18 S. Erfanifam , L. Jamilpanah , P. Sangpour , M. Hamdi , F. Haddadi , M. Erfanifam , G. Chanda , T. Herrmannsdörfer , V. Sazgari , A. Sadeghi , M. Mohseni

We systematically study the effect of high pressure on the structure, electronic structure and transport properties of 2H-MoS$_2$, based on first-principles density functional calculations and the Boltzmann transport theory. Our calculation…

Materials Science · Physics 2013-09-18 Huaihong Guo , Teng Yang , Peng Tao , Yong Wang , Zhidong Zhang

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

Mesoscale and Nanoscale Physics · Physics 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working current is under tight demand. Here, we report a unique…

We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance…

Materials Science · Physics 2015-06-18 Kaoru Kanayama , Kosuke Nagashio , Tomonori Nishimura , Akira Toriumi

High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type…

Mesoscale and Nanoscale Physics · Physics 2016-02-09 M. Farmanbar , G. Brocks

Many monolayer transition metal dichalcogenides, including MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, are direct bandgap two-dimensional (2D) semiconductors with sharp optical resonances at excitonic bound state frequencies. Recent experiments…

Mesoscale and Nanoscale Physics · Physics 2025-10-27 Tobias M. R. Wolf , Tian Xie , Chenhao Jin , Allan H. MacDonald

Squeezing bubbles and impurities out of interlayer spaces by applying force through a few-layer graphene capping layer leads to van der Waals heterostructures with ultra-flat structure free from random electrostatic potential arising from…

Mesoscale and Nanoscale Physics · Physics 2020-12-29 T. Hotta , A. Ueda , S. Higuchi , M. Okada , T. Shimizu , T. Kubo , K. Ueno , T. Taniguchi , K. Watanabe , R. Kitaura

High refractive index (4.4 at 1100 nm), negligibly small absorption in near-infrared spectral range, and ease of processing make MoSe$_2$ a perfect material for applications in near-infrared photonics. So far, implementation of…

We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer…

Mesoscale and Nanoscale Physics · Physics 2017-01-25 Jorge Quereda , Juan José Palacios , Nicolás Agräit , Andres Castellanos-Gomez , Gabino Rubio-Bollinger

The electronic and the structural properties of two dimensional van der Waals metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene [Science…

Materials Science · Physics 2017-10-11 Willian Couto , Adalberto Fazzio , Roberto Miwa

In this work we analyze the shift current conductivity in helical twisted trilayer graphene. Without loss of generality, we show that the density of states and the twist angle set an upper bound for this response, which is inversely…

Mesoscale and Nanoscale Physics · Physics 2025-12-01 Yuncheng Mao , Claudio Attaccalite , Diego García Ovalle

The effect of magnetic modulation on thermodynamic properties of a graphene monolayer in presence of a constant perpendicular magnetic field is reported here. One-dimensional spatial electric or magnetic modulation lifts the degeneracy of…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 SK Firoz Islam , Naveen K. Singh , Tarun Kanti Ghosh

Multilayer MoS2 possesses highly anisotropic thermal conductivities along in-plane and cross-plane directions that could hamper heat dissipation in electronics. With about 9% cross-plane compressive strain created by hydrostatic pressure in…

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…

Applied Physics · Physics 2021-10-18 Alessandro Grillo , Antonio Di Bartolomeo

Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered…

Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz…

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

Materials Science · Physics 2018-07-04 Igor Neri , Miquel López-Suárez

MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a…

Materials Science · Physics 2015-08-18 Weiyi Wang , Yanwen Liu , Lei Tang , Yibo Jin , Tongtong Zhao , Faxian Xiu