We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the interface similar to the MoS2/Gr ones. Theoretical calculations show significant effects of lateral layer size as well as layer number in the electronic properties. In monolayer MoS2/Gr by increasing the lateral size the energy gap disappears and the Fermi level shifts towards valence band. In the case of bilayer MoS2 on bilayer Gr structure, the Fermi level shift is again towards valence band but, the gap is slightly higher than the monolayer structure. We found that the experimentally obtained results for n-type MoSO/RGO results are qualitatively in agreement with theoretical calculations of the MoS2/Gr heterostructure. These results are beneficial to understand and design the high quality and low cost MoSO/RGO based electronic, optoelectronic and energy storage devices or cocatalysts.
@article{arxiv.1808.03534,
title = {Electrical and optical properties of MoS$_{2}$,MoO$_{x=2,3}$(MoSO)/RGO heterostructure},
author = {S. Erfanifam and L. Jamilpanah and P. Sangpour and M. Hamdi and F. Haddadi and M. Erfanifam and G. Chanda and T. Herrmannsdörfer and V. Sazgari and A. Sadeghi and M. Mohseni},
journal= {arXiv preprint arXiv:1808.03534},
year = {2018}
}