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Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes…

Graphene oxide (GO) is a nanofilm composed of graphene with various oxygen functional groups attached. GO is of interest due to its unique mechanical-enhancement properties, its tunable electronic properties, and its potential use in the…

Applied Physics · Physics 2019-07-16 P. Adamson , S. Williams

Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by…

Materials Science · Physics 2010-12-14 E. Loginova , N. C. Bartelt , P. J. Feibelman , K. F. McCarty

Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of…

Mesoscale and Nanoscale Physics · Physics 2015-05-19 Isaac Childres , Luis A. Jauregui , Mike Foxe , Jifa Tian , Romaneh Jalilian , Igor Jovanovic , Yong P. Chen

Graphene is one of the most promising 2D materials for various applications due to its unique electronic properties and high thermal stability. In previous studies, it was shown that when graphene is deposited onto some transition metal…

Materials Science · Physics 2018-02-13 Tianbai Li , Jory A. Yarmoff

The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene…

Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The…

Mesoscale and Nanoscale Physics · Physics 2009-01-21 Levente Tapaszto , Gergely Dobrik , Peter Nemes-Incze , Gabor Vertesy , Philippe Lambin , Laszlo P Biro

The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements,…

Mesoscale and Nanoscale Physics · Physics 2013-10-08 Hui Yan , Cheng-Cheng Liu , Ke-Ke Bai , Xuejiao Wang , Mengxi Liu , Wei Yan , Lan Meng , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Yugui Yao , Lin He

We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition (CVD) on platinum. We observe micron-size island-like impurity layers, which can easily be mistaken for second graphene layers in…

Mesoscale and Nanoscale Physics · Physics 2014-08-04 Jinglei Ping , Michael S. Fuhrer

Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect…

Materials Science · Physics 2014-07-28 Jani Kotakoski , Clemens Mangler , Jannik C. Meyer

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa.…

Mesoscale and Nanoscale Physics · Physics 2013-01-30 Amelia Barreiro , Felix Boerrnert , Mark H. Ruemmeli , Bernd Buechner , Lieven M. K. Vandersypen

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

Materials Science · Physics 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs) which are known…

Materials Science · Physics 2012-01-23 Sunmin Ryu , Janina Maultzsch , Melinda Y. Han , Philip Kim , Louis E. Brus

The graphene-insulator-semiconductor-structured electron source has garnered significant attention due to its high electron emission efficiency and highly monochromatic electron emission. Graphene, with its c-axis orientation and…

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial…

This study reports the successful synthesis of multilayered graphene sheets via microwave atmospheric pressure plasma. This innovative approach streamlines and expedites graphene production and other carbon nanostructures, eliminating the…

Plasma Physics · Physics 2024-03-07 Waqas Iqbal , Najeeb-ur-Rehman , Niaz Wali

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene…

Mesoscale and Nanoscale Physics · Physics 2012-07-10 Axel Eckmann , Alexandre Felten , Artem Mishchenko , Liam Britnell , Ralph Krupke , Kostya S. Novoselov , Cinzia Casiraghi

Potential structural modifications of graphene exposed to gaseous tritium are important for membrane-based hydrogen isotope separation. Such modifications cannot be explained by electron irradiation alone. Instead, tritiation, caused by the…

We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…

Materials Science · Physics 2015-06-22 Isaac Childres , Luis A. Jauregui , Yong P. Chen