Related papers: Carbon Memory Assessment
We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as…
Carbon-based materials like nanotubes and graphene are heavily investigated as future CMOS-like devices and in interconnect applications. While much of the interest has been devoted to the device aspects in competition to conventional CMOS…
As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive memories have been extensively explored for synaptic implementation…
As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…
Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…
As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…
The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
Flash memory technology is widely common in modern microelectronics, and is essentially affecting our daily life. Considering the recent progress in photonic circuitry, and in particular silicon photonics circuitry, there is now an…
Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…