Related papers: Weak antilocalization in (111) thin films of a top…
We have studied the carrier transport in two topological insulator (TI) Bi$_{2}$Te$_{3}$ microflakes between 0.3 and 10 K and under applied backgate voltages ($V_{\rm BG}$). Logarithmic temperature dependent resistance corrections due to…
We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…
Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low…
Electron states with the spin-momentum-locked Dirac dispersion at the surface of a three-dimensional (3D) topological insulator are known to lead to weak antilocalization (WAL), i.e. low temperature and low-magnetic field quantum…
In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect…
The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions and large non-saturation magnetoresistance. In this…
The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states…
We report the synthesis, structural characterization, and investigation of electrical transport, magnetic and specific heat properties of bulk semiconducting layered material Ta$_2$Ni$_3$Te$_5$. Ta$_2$Ni$_3$Te$_5$ crystallizes in the…
We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…
Magneto-transport properties of (111)-oriented single-crystal thin films of SnTe were investigated. SnTe (111) thin films were epitaxially grown on a BaF2 substrate by molecular beam epitaxy. By optimizing the growth conditions and the…
Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase…
Ni$_3$In$_2$S$_2$ is the most recent entrant into the family of topological insulator (TI) materials, the same exhibits very high MR in a low-temperature regime. Here, we report the crystal growth, the structural, micro-structural, and…
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field,…
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…
We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The…
Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological…
We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a…
Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…