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Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device…
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in…
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures.…
We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner…
Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…
The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor…
In a mesoscopic superconductor - normal metal - superconductor (SNS) heterostructure the quasiparticle distribution can be driven far from equilibrium by a voltage applied across the normal metal. This reduces the supercurrent between the…
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is…
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the…
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered…
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at…
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to…
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
Low-dimensional metal-semiconductor vertical heterostructures (VH) are promising candidates in the search of electronic devices at the extreme limits of miniaturization. Within this line of research, here we present a…
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor…