Related papers: Mott transition in granular aluminum
We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on…
A detailed investigation of first order ferrimagnetic (FRI) to antiferromagnetic (AFM) transition in Co (15%) doped $Mn_2Sb$ is carried out. These measurements demonstrate anomalous thermomagnetic irreversibility and glass-like frozen FRI…
The I-Mn-V antiferromagnet, NaMnBi, develops a very large positive magnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing a semiconductor-to-metal transition (SMT). In the absence of an SMT, a modest (20%) MR is achieved.…
We characterize the low-energy physics of the two-orbital Hubbard model in the orbital-selective Mott phase, in which one band is metallic and the other insulating. Using dynamical mean-field theory with the numerical renormalization group…
The behavior in magnetic fields of a highly correlated electron liquid approaching the fermion condensation quantum phase transition from the disordered phase is considered. We show that at sufficiently high temperatures $T\geq T^*(x)$ the…
High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $T\rightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of…
The low temperature behavior of Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ manganites are known to undergo a transition at $x\sim$0.3, from an insulating ferromagnetic state, at low Ca concentration, to an insulating antiferromagnetic state. Above the…
Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…
The temperature dependence of the excitation spectrum in NaOsO$_{\text{3}}$ through its metal-to-insulator transition (MIT) at 410 K has been investigated using resonant inelastic X-ray scattering (RIXS) at the Os L$_{\text{3}}$ edge. High…
Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
Using ferromagnetic-resonance spectroscopy (FMR), we investigate the anisotropic properties of epitaxial 3 nmPt/2 nmAg/10 nmFe/10 nmAg/GaAs(001) films in fully saturated meta-stable states at temperatures ranging from 70 K to 280 K. By…
We investigate the electrical and magneto-transport properties of Pt-C granular metals prepared by focused-electron-beam induced deposition. In particular, we consider samples close to the metal-insulator-transition obtained from as-grown…
We consider the ground state reorganization driven by an increasing nearest neighbor repulsion U for spinless fermions in a strongly disordered ring. When U -> 0, the electrons form a glass with Anderson localized states. At half filling, a…
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…
In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
It has been shown experimentally a long time ago that the magnetic ordering causes an anomalous behavior of the electron resistivity in ferromagnetic crystals. Phenomenological explanations based on the interaction between itinerant…
Different energy shifts for majority and minority electrons occur. Thus, for example in case of (laser) excited ferromagnetic metals majority and minority electrons may respond differently in time during closing the exchange splitting. Spin…