Related papers: Electron and Hole Mobilities in Single-Layer WSe2
The evolution of the physical properties of two-dimensional material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase…
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…
Quasi-one-dimensional transition-metal chalcogenide Ta$_2$PdSe$_6$ is a promising thermoelectric semimetal due to the strong electron-hole asymmetry in the carrier lifetime. However, the microscopic origin of such a strong asymmetry remains…
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have…
We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain…
We present here a formalism based on time-dependent density-functional theory (TDDFT) to describe characteristics of both intra- and inter-valley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of…
Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II…
Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and…
Low-dimensional materials have emerged as promising hosts for quantum emitters, whose emission typically arises from either strain-induced band bending or defect-induced two-level systems. Among these materials, transition metal…
Although there is strong theoretical and experimental evidence for electron-hole superfluidity in separated sheets of electrons and holes at low $T$, extending superfluidity to high $T$ is limited by strong 2D fluctuations and…
Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering.…
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge…
Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work,…
We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact.…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
We theoretically study the interplay between magnetism and a heavy Fermi liquid in the AB stacked transition metal dichalcogenide bilayer system MoTe$_2$/WSe$_2$ in the regime in which the Mo layer supports localized magnetic moments…
We report a first-principle theoretical study of a monolayer-thick lateral heterostructure (LH) joining two different transition metal dichalcogenides (TMDC): NbS2 and WSe2. The NbS2//WSe2 LH can be considered a prototypical example of a…