Related papers: Multistate nonvolatile straintronics controlled by…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
We present emergent mechanical memory storage behavior in soft cellular materials. The cellular materials are a network of soft hyperelastic rods which store shape changes, specifically local indentation. This happens under an applied…
Changes in strain can be used to modify electronic and magnetic properties in crystal structures, to manipulate nanoparticles and cells, or to control chemical reactions. The magneto-elastic (ME) effect--the change of magnetic properties…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
We report the first observation of controlled, strain-induced square moire patterns in stacked graphene. By selectively displacing native wrinkles, we drive a reversible transition from the usual trigonal to square moire order. Scanning…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
Half-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial…
We report multifunctional operation based on the nonlinear dynamics in a single microelectromechanical system (MEMS) resonator. This Letter focuses on a logic-memory device that uses a closed loop control and a nonlinear MEMS resonator in…
We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages…
We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population of up and down ferroelectric…
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts,…
Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and…
This work presents a three-dimensional constitutive model for shape memory alloys considering the TRansformation-Induced Plasticity (TRIP) as well as the Two-Way Shape Memory Effect (TWSME) through a large deformation framework. The…
We present a new first-order approach to strain-engineering of graphene's electronic structure where no continuous displacement field $\mathbf{u}(x,y)$ is required. The approach is valid for negligible curvature. The theory is directly…
Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 and doped-HfO2 material systems, as well as their fast…
First-principles density functional theory based calculations have been performed to investigate the strain-induced modifications in the electronic and vibrational properties of monolayer (ML) ZnO. Wide range of in-plane tensile and…
This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections…