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In this paper, we deduce a macroscopic strain gradient theory for plasticity from a model of discrete dislocations. We restrict our analysis to the case of a cylindrical symmetry for the crystal in exam, so that the mathematical formulation…

Mathematical Physics · Physics 2008-08-19 Adriana Garroni , Giovanni Leoni , Marcello Ponsiglione

Dislocations in van der Waals materials are linear defects confined to the interfaces between consecutive stoichiometric monolayers of a bulk layered crystal. Here, we present a mesoscale model for the description of interlayer dislocations…

Mesoscale and Nanoscale Physics · Physics 2024-09-19 Isaac Soltero , Vladimir I. Fal'ko

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…

Mesoscale and Nanoscale Physics · Physics 2023-09-11 Lucas E. A. Stehouwer , Alberto Tosato , Davide Degli Esposti , Davide Costa , Menno Veldhorst , Amir Sammak , Giordano Scappucci

Ionic transport in nano- to sub-nano-scale pores is highly dependent on translocation barriers and potential wells. These features in the free-energy landscape are primarily the result of ion dehydration and electrostatic interactions. For…

Mesoscale and Nanoscale Physics · Physics 2020-12-01 Subin Sahu , Michael Zwolak

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with…

Phonon resistance from dislocation scattering is often divided into short-range core interactions and long-range strain field interactions. Using electron energy-loss spectroscopy on a GaN dislocation, we report observations of vibrational…

We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the…

Strongly Correlated Electrons · Physics 2015-06-03 Lan Meng , Yanfeng Zhang , Wei Yan , Lei Feng , Lin He , Rui-Fen Dou , Jia-Cai Nie

The present paper studies non-uniform plastic deformations of crystals undergoing anti-plane constrained shear. The asymptotically exact energy density of crystals containing a moderately large density of excess dislocations is found by the…

Materials Science · Physics 2018-01-17 Khanh Chau Le , Yinguang Piao

By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room…

Whereas disclination defects are energetically prohibitive in two-dimensional flat crystals, their existence is necessary in crystals with spherical topology, such as viral capsids, colloidosomes or fullerenes. Such a geometrical…

Soft Condensed Matter · Physics 2020-07-01 Ireth García-Aguilar , Piermarco Fonda , Luca Giomi

Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both…

Crystalline materials deform in an intermittent way via dislocation-slip avalanches. Below a critical stress, the dislocations are jammed within their glide plane due to long-range elastic interactions and the material exhibits plastic…

Soft Condensed Matter · Physics 2015-05-20 Georgios Tsekenis , Nigel Goldenfeld , Karin A. Dahmen

We report on photoluminescence in the 3-7 $\mu$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at…

It has recently become popular to analyze the behavior of excess dislocations in plastic deformation under the assumption that such dislocations are arranged into walls with periodic dislocation spacing along the wall direction. This…

Materials Science · Physics 2015-05-30 Michael Zaiser , Istvan Groma

We use a discrete dislocation dynamics (DDD) approach to study the motion of a dislocation under strong stochastic forces that may cause bending and roughening of the dislocation line on scales that are comparable to the dislocation core…

Materials Science · Physics 2018-07-26 Jianhui Zhai , Michael Zaiser

Plastic deformation of microsamples is characterised by large intermittent strain bursts caused by dislocation avalanches. Here we investigate how ion irradiation affects this phenomenon during single slip single crystal plasticity. To this…

Understanding the interplay of structural and electronic symmetry breaking in Fe-based high temperature superconductors remains of high interest. In this work we grow strain-patterned multilayer FeSe thin films in a range of thicknesses…

Superconductivity · Physics 2022-12-13 Zheng Ren , Hong Li , He Zhao , Shrinkhala Sharma , Ilija Zeljkovic

The spontaneous emergence of heterogeneous dislocation patterns is a conspicuous feature of plastic deformation and strain hardening of crystalline solids. Despite long-standing efforts in the materials science and physics of defect…

Materials Science · Physics 2015-05-22 Stefan Sandfeld , Michael Zaiser

Li metal has been deposited on the surface of a Ru(0001) single crystal containing patches of monolayer-thick epitaxial graphene islands. The use of low-energy electron microscopy and diffraction allowed us to {\em in situ} monitor the…

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