Related papers: Determination of the electronics transfer function…
A key challenge in achieving scalable fault tolerance in superconducting quantum processors is readout fidelity, which lags behind one- and two-qubit gate fidelity. A major limitation in improving qubit readout is measurement-induced…
Superionic conductors, or solid-state ion-conductors surpassing 0.01 S/cm in conductivity, can enable more energy dense batteries, robust artificial ion pumps, and optimized fuel cells. However, tailoring superionic conductors require…
The time dependent transient lateral photovoltaic effect has been studied with us time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 um wide and 1500 um long Co lines…
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…
Time-dependent current of the electrons excited in the conduction band after ultrafast interband photogeneration is studied theoretically. The transient photocurrent is calculated for the nonlinear regime of response to a stationary…
We observe momentum transfer in the ponderomotive potential of near-infrared (NIR) laser pulses in time- and angle-resolved photoemission spectroscopy (tr-ARPES) experiments with ultrashort extreme ultraviolet probe pulses. Acceleration of…
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance…
Accurate and reliable state of charge (SoC) estimation becomes increasingly important to provide a stable and efficient environment for Lithium-ion batteries (LiBs) powered devices. Most data-driven SoC models are built for a fixed ambient…
Using the CLEO-II detector, we have measured the form factors associated with the electromagnetic transitions $\gamma^*\gamma \to $ meson. We have measured these form factors in the momentum transfer ranges from 1.5 to 9, 20, and 30 GeV^2…
Several new radio facilities have a field of view and sensitivity well suited for transient searches. This makes it more important than ever to accurately determine transient rates in radio surveys. The work presented here seeks to do this…
Transient phenomena are interesting and potentially highly revealing of details about the processes under observation and study that could otherwise go unnoticed. It is therefore important to maximize the sensitivity of the method used to…
In this work we extend our previous studies on the quantum transfer of a particle through a finite-bandwidth continuum under frequent detections, by replacing the assumed frequent measurements with a genuine continuous monitoring by a…
Being exact at both short- and long-time limits, the Gaussian approximation is widely used to calculate neutron incoherent inelastic scattering functions in liquids. However, to overcome a few numerical difficulties, extra physical…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
We present a new method of transient point source deconvolution for coded-aperture X-Ray detectors. Our method is based upon the calculation of the likelihood function and its interpretation as a probability density for the transient source…
A novel proton imaging technique was applied which allows a continuous temporal record of electric fields within a time window of several nanoseconds. This "proton streak deflectometry" was used to investigate transient electric fields of…
A simple yet precise optical technique for measuring the ambipolar carrier mobility in semiconductors is presented. Using tightly focused Gaussian laser beams in a photo-reflectance system, the modulated reflectance signal is measured as a…
For transient sources with timescales of 1-100 seconds, standardized imaging for all observations at each time step become impossible as large modern interferometers produce significantly large data volumes in this observation time frame.…
Charge transfer in a tunnel junction is studied under dc and ac voltage bias using quantum shot noise. Under dc voltage bias $V$, spectral density of noise measured within a very large bandwidth enables to deduce the current-current…