Related papers: Determination of the electronics transfer function…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values…
A two-dimensional Fourier transform of hadron form factors allows to determine their charge density in transverse space. We show that this method can be applied to any virtual photon induced transition, such as \gamma *(q)+N -> \pi N. Only…
Recording of transient absorption microscopy images requires fast detection of minute optical density changes, which is typically achieved with high-repetition-rate laser sources and lock-in detection. Here, we present a highly flexible and…
Data-driven prediction of fluid flow and temperature distribution in marine and aerospace engineering has received extensive research and demonstrated its potential in real-time prediction recently. However, usually large amounts of…
Accurate prediction of chip performance is critical for ensuring energy efficiency and reliability in semiconductor manufacturing. However, developing minimum operating voltage ($V_{min}$) prediction models at advanced technology nodes is…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a…
Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to…
A transient and high sensitivity sensor based on high-Q microcavity is proposed and studied theoretically. There are two ways to realize the transient sensor: monitor the spectrum by fast scanning of probe laser frequency or monitor the…
We study the most suitable procedure to measure the effective temperature in off-equilibrium systems. We analyze the stationary current established between an off-equilibrium system and a thermometer and the necessary conditions for that…
Current transfer is defined as a charge transfer process where the transferred charge carries information about its original motion. We have recently suggested that such transfer causes the asymmetry observed in electron transfer induced by…
We describe a simple method to experimentally determine the frequency dependencies of the per-unit-length resistance and conductance of transmission lines. The experiment is intended as a supplement to the classic measurement of the…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
Analyzing the internal loss characteristics and multimodedness of (integrated) optical devices can prove difficult. One technique to recover this information is to Fourier transform the transmission spectrum of optical components. This…
Heat transfer and dissipation exists in almost any physical, chemical or biological systems. Cells, as the basic unit of life, undergo continuous heat transfer and dissipation during their metabolism. The heat transfer and dissipation…
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…
When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface…
In this work, the force due to radiation pressure is measured with sub-10 pN sensitivity, corresponding to less than 2 mW of optical power. The apparatus adds homemade reflectors to a commercial Cavendish balance, which consists of a…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
We present a novel method to measure transient photovoltage at nanointerfaces using ultrafast electron diffraction. In particular, we report our results on the photoinduced electronic excitations and their ensuing relaxations in a…