Related papers: From Spin Torque Nano-Oscillators to Memristors: M…
Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…
Memristors, initially introduced in the 1970s, have received increased attention upon successful synthesis in 2008. Considerable work has been done on modeling and applications in specific areas, however, very little is known on the…
Low-cost spintronic devices functioning in zero applied magnetic field are required for bringing the idea of spin-based electronics into the real-world industrial applications. Here we present first microwave measurements performed on…
Spin-transport in superconductors is a subject of fundamental and technical importance with the potential for applications in superconducting-based cryogenic memory and logic. Research in this area is rapidly intensifying with recent…
Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc-current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin-momentum transfer, a…
Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network,…
The purpose of this manuscript is to review my recent activity on three main research topics. The first concerns the nature of low temperature amorphous solids and their relation with the spin glass transition in a magnetic field. This is…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
Despite the promise of superior efficiency and scalability, real-world deployment of emerging nanoelectronic platforms for brain-inspired computing have been limited thus far, primarily because of inter-device variations and intrinsic…
Spin reversal in magnetic nanomolecules and nanoclusters is considered. A method is suggested allowing, from one side, to keep for long time magnetic polarization in a metastable state and, from the other side, for starting the reversal…
We investigate experimentally and analytically the impact of thermal noise on the sustained gyrotropic mode of vortex magnetization in spin transfer nano-oscillators and its consequence on the linewidth broadening due to the different…
The use of spin transfer nano-oscillators (STNOs) to generate microwave signal in nanoscale devices have aroused tremendous and continuous research interest in recent years. Their key features are frequency tunability, nanoscale size, broad…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
A combined bottom-up assembly of electrodeposited nanowires and electron beam lithography technique has been developed to investigate the spin transfer torque and microwave emission on specially designed nanowires containing a single…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for…
Spin torque oscillators (STOs) are emerging microwave devices that can potentially be used in spin-logic devices and the next-generation high-speed computing architecture. Thanks to their non-linear nature, STOs are easily tunable by the…