Related papers: Non-diffusion theory of weak localization in graph…
We uncover two anomalous features in the nonlocal transport behavior of two-dimensional metallic materials with spin-orbit coupling. Firstly, the nonlocal resistance can have negative values and oscillate with distance, even in the absence…
We present a theory of weak localization (WL) in the presence of generic spin-dependent fields, including any type of spin-orbit coupling, Zeeman fields, and non-homogeneous magnetic textures. We go beyond the usual diffusive approximation,…
Moir\'e superlattice created by twist stacking has multiple physical properties. These physical properties depend on the twist angle, hence investigation of the twist angle dependency is important for the deep understanding of physical…
We study the behavior of charge carriers in graphene in inhomogeneous perpendicular magnetic fields. We consider two types of one-dimensional magnetic profiles, uniform in one direction: a sequence of N magnetic barriers, and a sequence of…
In the presence of the charged impurities, we study the weak localization (WL) effect by evaluating the quantum interference correction (QIC) to the conductivity of Dirac fermions in graphene. With the inelastic scattering rate due to…
We calculate the interference correction to the conductivity of doped transition metal dichalcogenide (TMDC) monolayers. Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and…
Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In…
A tight-binding model with randomly fluctuating atomic positions is studied to discuss the effect of strong disorder in graphene. We employ a strong-disorder expansion for the transport quantities and find a diffusive behavior, where the…
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same…
The resistance at the charge neutral (Dirac) point was shown by Checkelsky et al in Phys. Rev. B 79, 115434 (2009) to diverge upon the application of a strong magnetic field normal to graphene. We argue that this divergence is the signature…
We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer. For the parallel magnetization configuration, Klein…
We analyze the weak localization correction to the conductivity of a spinless two-leg ladder model in the limit of strong dephasing \tau_\phi << \tau_tr, paying particular attention to the presence of a magnetic field, which leads to an…
We consider the effect of a magnetic field $B$ on the transport of neutral composite particles, excitons, in weakly disordered 2D systems. In the case of classical transport, when the interference of different paths is neglected, the…
We report a theoretical low-field magnetotransport study unveiling the effect of pseudospin in realistic models of weakly disordered graphene-based materials. Using an efficient Kubo computational method, and simulating the effect of…
We compute the magnetization of graphene in a magnetic field, taking into account for generality the possibility of a mass gap. We concentrate on the physical regime where quantum oscillations are not observed due to the effect of the…
Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing…
The quantum capacitance of graphene can be negative when the graphene is placed in a strong magnetic field, which is a clear experimental signature of positional correlations between electrons. Here we show that the quantum capacitance of…
Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an…