Related papers: Electronic Materials with Wide Band Gap: Recent De…
Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories…
To meet the growing demands of advanced electronic systems, next-generation power and RF semiconductor devices must operate efficiently at higher power levels and switching frequencies while remaining compact. Current state-of-the-art GaN…
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators. However, the emergence of…
As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large…
In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…
In this paper, an overview of the wide bandgap (WBG) semiconductors for radiation detection applications is presented. The recent advancements in the fabrication of high-quality wafers have enabled the remarkable WBG semiconductor device…
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its…
Novel wide-band-gap semiconductors are needed for next-generation power electronic but there is a gap between a promising material and a functional device. Finding stable contacts is one of the major challenges, which is currently dealt…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors…
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…
Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive…
The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric…
Combination of electrical conductivity and optical transparency in the same material -- known to be a prerogative of only a few oxides of post-transition metals, such as In, Sn, Zn and Cd -- manifests itself in a distinctive band structure…
Wire grid polarizers (WGPs), periodic nano-optical meta-surfaces, are convenient polarizing elements for many optical applications. However, they are still inadequate in the deep ultraviolet spectral range. We show that to achieve high…
The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon…
The structural, electronic and dynamical properties of a group of 2D germanium-based compounds, including GeC, GeN, GeO, GeSi, GeS, GeSe, and germanene, are investigated by employing first-principles calculations. The most stable structure…
Beta gallium oxide (\beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. \beta-Ga2O3…
The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great…