Related papers: Stacking-dependent shear modes in trilayer graphen…
Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing…
ABC-stacked trilayer graphene has exhibited a variety of correlated phenomena owing to its relatively flat bands and gate-tunable bandgap. However, convenient methods are still lacking for identifying ABC graphene with nanometer-scale…
Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying at ~1580 cm-1, changes strongly with electrostatic gating.…
We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity and linewidth in the Magneto-Raman scattering of optical E2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene…
The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport…
Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is the nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. Here we report a unique…
The most important bands for the evaluation of strain in graphene (the 2D and 2D prime modes) are investigated. It is shown that for Bernal-stacked bilayers, the two-phonon Raman features have three different components that can be assigned…
Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking…
We have investigated the interlayer shear and breathing phonon modes in MoS$_{2}$ with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four…
The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an…
The symmetry group analysis is applied to classify the phonon modes of $N$-stacked graphene layers (NSGL's) with AB- and AA-stacking, particularly their infra-red and Raman properties. The dispersions of various phonon modes are calculated…
2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to…
In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the…
Though graphene has been intensively studied by Raman spectroscopy, in this letter, we report a study of second-order overtone and combinational Raman modes in an unexplored range of 1690-2150 cm-1 in nonsuspended commensurate (AB-stacked),…
We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical…
Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic…
The mechanical response of embedded ABA trilayer graphene flakes loaded in tension and compression on polymer beams is monitored by simultaneous Raman measurements through the strain sensitivity of the G or 2D peaks. A characteristic…
The phonon dispersions of monolayer and few-layer graphene (AB bilayer, ABA and ABC trilayers) are investigated using the density-functional perturbation theory (DFPT). Compared with the monolayer, the optical phonon $E_{2g}$ mode at…
The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA)…
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer,…