Electron-infrared phonon coupling in ABC trilayer graphene
Abstract
Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significantly stronger electron-infrared phonon coupling strength than the Bernal ABA-stacked trilayer graphene. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering.
Cite
@article{arxiv.2304.14860,
title = {Electron-infrared phonon coupling in ABC trilayer graphene},
author = {Xiaozhou Zan and Xiangdong Guo and Aolin Deng and Zhiheng Huang and Le Liu and Fanfan Wu and Yalong Yuan and Jiaojiao Zhao and Yalin Peng and Lu Li and Yangkun Zhang and Xiuzhen Li and Jundong Zhu and Jingwei Dong and Dongxia Shi and Wei Yang and Xiaoxia Yang and Zhiwen Shi and Luojun Du and Qing Dai and Guangyu Zhang},
journal= {arXiv preprint arXiv:2304.14860},
year = {2023}
}