Related papers: Direct bandgap silicon quantum dots achieved via e…
Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence…
Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely…
A finite transfer integral $t_a$ orthogonal to the conducting chains of a highly one-dimensional metal gives rise to empty and filled bands that simulate an indirect-gap semiconductor upon formation of a commensurate charge-density-wave…
Efficient transduction of electromagnetic signals between different frequency scales is an essential ingredient for modern communication technologies as well as for the emergent field of quantum information processing. Recent advances in…
Surface traps and associated emission in quantum dots (QDs) sought a lot of research attention because of the fundamental interests apart from their influence on the emission characteristics. In ref [Acc. Chem. Res. Vol 43 (2) pp 190, 2010]…
We present a theoretical analysis of intraband optical transitions from the intermediate pseudo-band of confined states to the conduction band in a finite, inhomogeneous stack of self-assembled semiconductor quantum dots. The chain is…
Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and…
The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot…
Self-doping can not only suppress the photogenerated charge recombination of semiconducting quantum dots by self-introducing trapping states within the bandgap, but also provide high-density catalytic active sites as the consequence of…
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…
Quantum dots stand out as the most advanced and versatile light-matter interface available today. Their ability to deliver high-quality, high-rate, and pure photons has set benchmarks that far surpass other emitters. Yet, a critical…
Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk…
Unique optical properties of colloidal semiconductor quantum dots (QDs), arising from quantum mechanical confinement of charge within these structures, present a versatile testbed for the study of how high electric fields affect the…
Gapless materials in electronic contact with superconductors acquire proximity-induced superconductivity in a region near the interface. Numerous proposals build on this addition of electron pairing to originally non-superconducting systems…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type…
We have used the TOPAS simulation framework to model the direct conversion of 511 keV gamma rays to electrons in a micro-channel plate (MCP) constructed from thin laminae of a heavy-metal-loaded dielectric such as lead-glass, patterned with…
Direct-gap materials hold promises for excitonic insulator. In contrast to indirect-gap materials, here the difficulty to distinguish from a Peierls charge density wave is circumvented. However, direct-gap materials still suffer from the…