Related papers: Atom-Wide Co Wires on Cu(775) at Room Temperature
We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the drag resistance is measured in the true one-dimensional (1D) regime where both wires…
Atomic structures of quasi-one-dimensional (1D) character can be grown on semiconductor substrates by metal adsorption. Significant progress concerning study of their 1D character has been achieved recently by condensing noble metal atoms…
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured…
We analyze the influence of spatial orientation on the optical response of hydrogenated silicon quantum wires. The results are relevant for the interpretation of the optical properties of light emitting porous silicon. We study…
A first-principles investigation of the anomalous ferromagnetism of a quasi-one-dimensional Co chain at the Pt(111) step edge is reported. Our calculations show that the symmetry breaking at the step leads to an easy magnetization axis at…
We report a first principles theoretical study of the surface relaxation and lattice dynamics of the Cu(211) surface using the plane wave pseudopotential method. We find large atomic relaxations for the first several atomic layers near the…
A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials…
We have statistically characterized the self-assembly of multi-layer polystyrene colloidal crystals, using the technique of vertical deposition, with parameters chosen to produce thick layers of self-assembled crystals in one deposition…
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The…
The microstructure of a Cu/V nanocomposite wire processed by cold drawing was investigated by high resolution transmission electron microscopy and atom probe tomography. The experimental data clearly reveal some deformation induced…
A dense phase of GaAs wires forms in the early stages of strained growth on GaP,assembling from elongated Stranski-Krastanow islands. The electron diffraction during growth is consistent with long, faceted GaAs islands that are…
We study theoretically the effects of long-range and on-site Coulomb interactions on the topological phases and transport properties of spin-orbit-coupled quasi-one-dimensional quantum wires imposed on an s-wave superconductor. The…
Ballistic quantum wires are exposed to longitudinal profiles of perpendicular magnetic fields composed of a spike (magnetic barrier) and a homogeneous part. An asymmetric magnetoconductance peak as a function of the homogeneous magnetic…
We have fabricated 5nm-high Fe(110) stripes by self-organized (SO) growth on a slightly vicinal R(110)/Al2O3(11-20) surface, with R=Mo, W. Remanence, coercivity and domain patterns were observed at room temperature (RT). This contrasts with…
One-dimensional Indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below $\sim100$ K due to the formation of a Charge Density Wave (CDW). The physics of this transition is not conventional…
We report an unusual insulating state in one-dimensional quantum wires with a non-uniform confinement potential. The wires consist of a series of closely spaced split gates in high mobility GaAs/AlGaAs heterostructures. At certain…
We use a simple holographic model to discuss approaching the edge of the conformal window in strongly coupled gauge theories to draw lessons for lattice studies. Walking gauge theories have a gap between the scale where they enter the…
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units.…
Atoms transferred to W(111) and W(110) tip apices from the Au(111) surface during tunneling and approach to mechanical contact experiments in STM are characterized in FIM at room temperature and at 158 K. The different activation energies…
We report experiments on aluminum nanowires in ultra-high vacuum at room temperature that reveal a periodic spectrum of exceptionally stable structures. Two "magic" series of stable structures are observed: At low conductance, the formation…