Related papers: Double Gated Single Molecular Transistor for Charg…

While Single Molecule Transistors have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated. We have used the technique of electromigration to…

We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the…

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…

We analyze electrostatic interaction between a sharp conducting tip and a thin one-dimensional wire, e.g., a carbon nanotube, in a scanned gate microscopy (SGM) experiment. The problem is analytically tractable if the wire resides on a thin…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

We study the occupation of two electrostatically-coupled single-level quantum dots with spinless electrons as a function of gate voltage. While the total occupation of the double-dot system varies monotonically with gate voltage, we predict…

We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade…

We have measured the Cooper Pair Transistor (CPT) in a tunable electromagnetic environment consisting of four one-dimensional SQUID arrays. The transport properties of the CPT in the high impedance limit, Z_env>>R_Q=6.45~k\Omega, are…

The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in…

We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…

We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances…

We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…

One-electron tunneling through a quantum dot with a strong magnetic field in the direction of the current is studied. The linear magneto-conductance is computed for a model parabolic dot with seven electrons in the intermediate states and…

We present a theory of electronic properties and the spin blockade phenomena in a gated linear triple quantum dot. Quadruple points where four different charge configurations are on resonance, particularly involving (1,1,1) configuration,…

We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the…

Topological superconductivity emerges in chains or arrays of magnetic atoms coupled to a superconductor. However, the external controllability of such systems with gate voltages is detrimental for their future implementation in a…

We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage.…

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…

We describe a mechanism for realizing a controlled phase gate for solid-state charge qubits. By augmenting the positionally defined qubit with an auxiliary state, and changing the charge distribution in the three-dot system, we are able to…