Related papers: Spin-transfer torque switching at ultra low curren…
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
We present a general formulation of spin-dependent transport through a clean one-dimensional interacting quantum wire or carbon nanotube, connected to non-collinear ferromagnets via tunnel junctions. We show that the low energy description…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current…
We study the bias-dependent spin-transfer torque in magnetic tunnel junctions in the Stoner model by scattering theory. We show that the in-plane (Slonczewski type) torque vanishes and subsequently reverses its direction when the bias…
The responses of the electrical current and the current-induced spin transfer torque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunnel junction are investigated by means of the time-dependent nonquilibrium Green function…
Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
We study non-equilibrium magneto-transport through a single electron transistor or an impurity. We find that due to spin-flip transitions, generated by the spin-orbit interaction, the spectral density of the tunneling current fluctuations…
Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque ({\xi}_DL^j) and the…
The magnetization reversal of Stoner particles is investigated from the point of view of nonlinear dynamics within the Landau-Lifshitz-Gilbert formulation. The following results are obtained. 1) We clarify that the so-called…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
We have recently reported that the spin transfer torque switching current density is very sensitive to not only the junction sizes but also the exchange stiffness constants of the free layer according to the micromagnetic simulations. The…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…