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We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…
Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical…
We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…
We study how the surface states in the strong topological insulator Bi$_2$Se$_3$ are influenced by finite size effects, and compare our results with those recently obtained for 2D topological insulator HgTe. We demonstrate two important…
We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is…
Three-dimensional (3D) topological insulators in general need to be protected by certain kinds of symmetries other than the presumed $U(1)$ charge conservation. A peculiar exception is the Hopf insulators which are 3D topological insulators…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…
Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this…
We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into…
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently…
Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal…
Topological insulators are new class of materials which are characterized by a bulk band gap like ordinary band insulator but have protected conducting states on their edge or surface. These states emerge out due to the combination of…
We investigate the electrostatic effects in doped topological insulators by developing a self consistent scheme for an interacting tight binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic…
We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show…
Topologically gapless edge states, characterized by topological invariants and Berry's phases of bulk energy bands, provide amazing techniques to robustly control the reflectionless propagation of electrons, photons and phonons. Recently, a…
Three dimensional topological insulator represents a class of novel quantum phases hosting robust gapless boundary excitations, which is protected by global symmetries such as time reversal, charge conservation and spin rotational symmetry.…
Three-dimensional strong topological insulators (TIs) guarantee the existence of a 2-D conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two…
An important characteristic of topological band insulators is the necessary presence of in-gap edge states on the sample boundary. We utilize this fact to show that when the boundary is reconnected with a twist, there are always zero-energy…
Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of…
The electronic structures of graphene systems and topological insulators have closely-related features, such as quantized Berry phase and zero-energy edge states. The reason for these analogies is that in both systems there are two relevant…