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We theoretically consider temperature and density-dependent electron-phonon interaction induced many-body effects in the two-dimensional (2D) metallic carriers confined on the surface of the 3D topological insulator (e.g. Bi$_2$Se$_3$). We…

We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…

We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement…

Topological insulators are new quantum states with helical gapless edge or surface states inside the bulk band gap.These topological surface states are robust against the weak time-reversal invariant perturbations, such as lattice…

From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to…

Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into…

The surface bound electronic states of three-dimensional topological insulators, as well as the edge states in two-dimensional topological insulators, are investigated in the presence of a circularly polarized light. The strong coupling…

We use the bulk Hamiltonian for a three-dimensional topological insulator such as $\rm Bi_2 Se_3$ to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the…

Topologically protected gapless edge/surface states are phases of quantum matter which behave as massless Dirac fermions, immunizing against disorders and continuous perturbations. Recently, a new class of topological insulators (TIs) with…

The surface of a 3D topological insulator is a new type of two dimensional electron gas (2DEG). The exactly quantized magneto-optical or axionic response of a 3D topological insulator is a direct result of the Berry's phase protected…

Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it…

We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the…

Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as…

Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at…

We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…

We investigate states on the surface of strong and weak topological insulators and superconductors that have been gapped by a symmetry breaking term. The surface of a strong 3D topological insulator gapped by a magnetic material is well…

We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the…

The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimensional topological insulators with protected gapless surface states at any surface. By employing a six-band k.p model, we determine the spin…

We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in…