Related papers: Phonon-drag effect in FeGa3
Magnon-drag is shown to dominate the thermopower of elemental Fe from 2 to 80 K and of elemental Co from 150 to 600 K; it is also shown to contribute to the thermopower of elemental Ni from 50 to 500 K. Two theoretical models are presented…
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about…
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…
We study phonon-drag contribution to the thermoelectric power in a quasi-two-dimensional electron system confined in GaAs/AlGaAs heterostructure in presence of both Rashba spin-orbit interaction and perpendicular magnetic field at very low…
We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We…
The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong…
We carried out a comprehensive study of the structural, electrical transport, thermal and thermodynamic properties in ferrimagnetic Mn$_3$Si$_2$Te$_6$ single crystals. Mn and Te $K$-edge X-ray absorption spectroscopy and synchrotron powder…
We study the low-temperature thermopower of micron sized, free-standing membranes containing a two-dimensional electron system. Suspended membranes of 320 nm thickness including a high electron mobility structure in Hall bar geometry of 34…
We have performed high-pressure, electrical resistivity, and specific heat measurements on CeTe3 single crystals. Two magnetic phases with nonparallel magnetic easy axes were detected in electrical resistivity and specific heat at low…
Thermal conductivity \kappa is measured at very low temperatures down to 0.28 K for pure and Mg-doped CuGeO_3 single crystals. The doped samples carry larger amount of heat than the pure sample at the lowest temperature. This is because…
Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction.…
The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T…
Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated…
The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally…
This study reports the observation of phonon-drag thermopower polarity reversal in Ba-doped KTaO3 thin films, mediated by electron-phonon Umklapp scattering. Epitaxial films with distinct carrier concentrations (3.7 x 10^20 cm^-3 and 4.9 x…
We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
A first-principles density-functional-theory method has been used to reinvestigate the mechanical and dynamical stability of the metallic phase of AlH3 between 65-110 GPa. The electronic properties and phonon dynamics as a function of…
Very recently, a new graphene-like crystalline, hole-free, 2D-single-layer carbon nitride C3N, has been fabricated by polymerization of 2,3-diaminophenazine and used to fabricate a field-effect transistor device with an on-off current ratio…
We identify the driving mechanism of the gigantic Seebeck coefficient in FeSb$_2$ as the phonon-drag effect associated with an in-gap density of states that we demonstrate to derive from excess iron. We accurately model electronic and…