Thermopower in p-type GaAs/AlGaAs layers

M. Tsaousidou; P. N. Butcher; P. A. Crump; R. J. Hyndman; B. L. Gallagher

Thermopower in p-type GaAs/AlGaAs layers

Condensed Matter 2007-05-23 v1

Authors: M. Tsaousidou , P. N. Butcher , P. A. Crump , R. J. Hyndman , B. L. Gallagher

Abstract

We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We find that $S^{d}$ is significant for temperatures up to 0.3K while at higher temperatures $S^{g}$ dominates. The calculated and measured $S^{g}$ agree very well with no adjustable parameters.

Keywords

thermal properties of materials

Cite

@article{arxiv.cond-mat/0004274,
  title  = {Thermopower in p-type GaAs/AlGaAs layers},
  author = {M. Tsaousidou and P. N. Butcher and P. A. Crump and R. J. Hyndman and B. L. Gallagher},
  journal= {arXiv preprint arXiv:cond-mat/0004274},
  year   = {2007}
}

Comments

RevTex, 7 pages (included 2 eps figures). Proceedings of the 24th International Conference on the Physics of Semiconductors, ICPS24 Jerusalem August 1998

Thermopower in p-type GaAs/AlGaAs layers

Abstract

Keywords

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