Related papers: Luminescence associated with stacking faults in Ga…
Electronic structure and band characteristics for zinc monochalcogenides with zinc-blende- and wurtzite-type structures are studied by first-principles density-functional-theory calculations with different approximations. It is shown that…
The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The…
Wurtzite-ZnO is a wide-bandgap polar material with a ferroelectric-switching barrier that is too high to utilize, but the barrier can be reduced and switching observed in substituted materials such as Zn0.5Mg0.5O. Here, we seek to…
Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected…
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient…
When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which…
We investigate the effect of a magnetic field supported at a single lattice site on the low-energy spectrum of the ferromagnetic Heisenberg XXZ chain. Such fields, caused by impurities, can modify the low-energy spectrum significantly by…
Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated…
Exciton condensation in semiconductors and semimetals has long been predicted but remains elusive. In a semiconductor, condensation occurs when the exciton binding energy matches the band gap. This binding energy results from a balance…
Localised emission from defect states in monolayer transition metal dichalcogenides is of great interest for optoelectronic and quantum device applications. Recent progress towards high temperature localised emission relies on the…
The nature of stacking faults - whether intrinsic or extrinsic - plays a pivotal role in defect-mediated processes in crystalline materials. Yet, current electron microscopy techniques for their reliable analysis remain limited to either…
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from…
We numerically study weak, random, spatial velocity modulation ["quenched gravitational disorder" (QGD)] in two-dimensional massless Dirac materials. QGD couples to the spatial components of the stress tensor; the gauge-invariant disorder…
We report calculated, electronic and related properties of wurtzite and zinc blende gallium nitrides (w-GaN, zb-GaN). We employed a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism.…
Inelastic scattering of visible light (Raman effect) offers a window into properties of correlated metals such as spin, electron and lattice dynamics as well as their mutual interactions. In this review we focus on electronic and spin…
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation…
The observability of the Hofstadter spectrum generated by a Wigner crystal using photoluminescence techniques is studied. Itinerant hole geometries are examined, in which a hole may combine directly with electrons in the lattice. It is…
III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators. Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct integration with Si and wide bandgap…
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and maintain the wurtzite (WZ) crystal phase in self-assisted…
The low energy electronic spectra of rotationally faulted graphene bilayers are studied using a long wavelength theory applicable to general commensurate fault angles. Lattice commensuration requires low energy electronic coherence across a…