Related papers: Luminescence associated with stacking faults in Ga…
The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counterparts. However, NWs-based devices face significant…
The discovery of ferroelectricity in wurtzite nitrides has paved the way for measuring and understanding spontaneous polarization in III-V semiconductors. However, the calculation of polarization effects at heterointerfaces - crucial for…
We analyze the Wannier-Stark spectrum of a quantum particle in tilted two-dimensional lattices with the Bloch spectrum consisting of two subbands, which could be either separated by a finite gap or connected at the Dirac points. For…
We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schr\"odinger equation,…
We report both zinc-blende (ZB) and wurtzite (WZ) crystal phase self-assembled GaAs quantum dots (QDs) embedding in a single GaAs/AlGaAs core-shell nanowires (NWs). Optical transitions and single-photon characteristics of both kinds of QDs…
In ordinary semiconductor bilayers, exciton condensates appear at total Landau level filling factor $\nu_{T}=1$. We predict that similar states will occur in Bernal stacked graphene bilayers at many non-zero integer filling factors. For…
Rocksalt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic…
We present microscopic calculations of the absorption spectra for GaN/Al(x)Ga(1-x)N quantum well systems. Whereas the quantum well structures with the parabolic law of dispersion exhibit the usual bleaching of an exciton resonance without…
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…
We have investigated the effects of hydrostatic pressure and compressive biaxial strain on the $\Gamma$-point energy states of GaN and InN with zincblende crystal structure via first-principles DFT+HSE06 computation. To correctly reproduce…
We investigate the scaling properties of single flux lines in a random pinning landscape consisting of splayed columnar defects. Such correlated defects can be injected into Type II superconductors by inducing nuclear fission or via direct…
Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in…
The wurtzite phase group III-Nitrides (AlN, GaN, InN) have attracted great interest due to their successful applications in the optoelectronics since the 90's. In this paper we perform a comprehensive study of AlN, GaN and InN structural…
We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial…
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM)…
In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from…
Zn in GaN forms an efficient radiative center and acts as a deep acceptor which can make the crystal insulating. Four different Zn-related centers have been by now identified, leading to light emission in the range between 1.8 eV and 2.9…
The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a…
We develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (ZB) semiconductors. We first show that, in nanowires,…