Related papers: Titanic Magnetoresistance in WTe2
Half metals, which are amenable to perfect spin filtering, can be utilized for high-magnetoresistive devices. However, available half metals are very limited. Here, we demonstrate that materials with intrinsic spin-valley-mismatched (SVM)…
Magnetoresistance (MR) in the out-of-plane resistivity $\rho_c$ for the normal state of the one-layer high-quality Bi_2Sr_2CuO_x single crystals under various dc magnetic fields up to 28 T over the temperature region 6-100 K has been…
Colossal magnetoresistance (CMR) has been observed across many Eu$^{2+}$-based materials; however, its origin is not completely understood. Here we investigate the antiferromagnetic insulator EuZn$_2$P$_2$ through single crystal x-ray…
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The…
We have investigated the magnetoresistive behavior of Dirac semi-metal Cd3As2 down to low temperatures and in high magnetic fields. A positive and linear magnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14 T, on…
We have used resistivity measurements to study the magnetic phase diagram of the itinerant antiferromagnet FeGe_2 in the temperature range from 0.3->300 K in magnetic fields up to 16 T. In contrast to theoretical predictions, the…
Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
Microscopic theories of magnetoresistance have traditionally focused on momentum relaxation and the plasma frequency of itinerant electrons. Here, we uncover a distinct mechanism in which magnetoresistance originates from quantum…
We have recently reported a new mechanism of colossal magnetoresistance in electron doped Mn oxypnictides NdMnAsO1-xFx. Magnetoresistances of up to -95 percent at 3 K have been observed. Here we show that upon replacing Nd for Pr, the CMR…
By the first-principles electronic structure calculations, we have systematically studied the electronic structures of recently discovered extremely large magnetoresistance (XMR) materials LaSb and LaBi. We find that both LaSb and LaBi are…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
Bulk metallic samples were synthesized from different binary powder mixtures consisting of elemental Cu, Co, and Fe using severe plastic deformation. Small particles of the ferromagnetic phase originate in the conductive Cu phase, either by…
The extremely large transverse magnetoreistance (the magnetoresistant ratio $\sim 1.3\times10^5\%$ in 2 K and 9 T field, and $4.3\times 10^6\%$ in 0.4 K and 32 T field, without saturation), and the metal-semiconductor crossover induced by…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Magnetoresistance in the spin-density wave (SDW) state of (TMTSF)2PF6 is known to exhibit a rich variety of the angular dependencies when a magnetic field B is rotated in the b'-c*, a-b' and a-c* planes. In the presence of a magnetic field…
In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect.…
The discovery of two-dimensional (2D) van der Waals magnets opened unprecedented opportunities for the fundamental exploration of magnetism in quantum materials and the realization of next generation spintronic devices. Here, based on a…